Prof. Choi's Publication List (2024)

Prof. Suk-Ho Choi'sPublication List

<![if !supportLists]>§ <![endif]>International Journal

<![if !supportLists]>§ <![endif]>Domestic Journal

InternationalJournal

2024

<![if !supportLists]>243.<![endif]>C. W.Jang, Y. A. Salawu, Q. Zhang, W. U. Jeong, J. Ahn, S.-E. Lee, H. Son, H.-J. Kim, M.-H. Jung, J. H. Kim, W. H. Shon,J.-S. Rhyee, V. T. Hoa, S. Cho,S. Kim, X. Wang, R. G. Elliman, E. Hwang, and S.-H. Choi, “Dimensionality- and topology-drivenmetal-insulator transition of topological Bi_0.96Sb_0.04thin films”, submitted.

<![if !supportLists]>242.<![endif]>S. W. Hwang, J. M. Kim, H. Lee, C. W. Jang, S. Kim, E.Hwang, and S.-H. Choi, “Strong enhancement of light emission in core-shell InGaN/GaN multi-quantum-wellnanowire light-emitting diodes by incorporating graphene quantum dots”,submitted.

<![if !supportLists]>241.<![endif]>C. W.Jang, D. H. Shin, and S.-H. Choi, “Use of ahexagonal boron nitride interlayer for noticeable enhancement of detectivity inflexible dual-doped graphene/WS₂ heterojunction photodetectors”, ACS Applied Nano Materials 7, 23806 (2024).

<![if !supportLists]>240.<![endif]>C. W.Jang, D. H. Shin, and S.-H. Choi, “Remarkableenhancement of detectivity and stability in flexible n‑i-p-type perovskite photodetectors by concurrent use ofvarious two-dimensional materials: doped graphene, graphene quantum dots, WS₂, and h-BN”, ACS Applied Electronic Materials 6, 5517(2024).

<![if !supportLists]>239.<![endif]>T. J. Jeong, S. Kim, and S.-H. Choi, “Temperaturedependence of photoluminescence in twisted heterobilayersof transition-metal dichalcogenides”, Current Applied Physics 60, 9(2024).

<![if !supportLists]>238.<![endif]>T. J. Jeong, C. W. Jang, S. Kim, and S.-H. Choi,“Thickness-dependent variations of atomic vibration, band-edge excitonicemission, and valleytronic response in layered Mo_1-xW_xS₂ternary compounds”, Journal of Alloys & Compounds 976, 173142 (2024).

2023

<![if !supportLists]>237.<![endif]>C. W. Jang, Y. A. Salawu, J. H. Kim, V.Q. Nguyen, M. S. Kim, S.-E. Lee, H. Son,H.-J. Kim, J.-S. Rhyee, V. T.Hoa, S. Cho, J. S. Lee, M.-H. Jung, W. H. Shon, T. J. Jeong, S. Kim,H.-Y. Yum, J. H. Kim, X. Wang, R. G. Elliman, S. J. Park, J. Kim, H.Jin, and S.-H. Choi, “2D Weyl-semimetal states achieved by athickness-dependent crossover and topological phase transition in Bi_0.96Sb_0.04thin films”, Advanced Functional Materials 33, 2305179 (2023).

<![if !supportLists]>236.<![endif]>C. W. Jang, D. H. Shin, and S.-H. Choi, “Performanceenhancement of perovskite/porous-Si photodetectors by reducing the dark currentwith concomitant use of graphene quantum dots in the active layer andbathocuproine on the back surface”, Journal of Alloys & Compounds 948, 169716 (2023).

2022

<![if !supportLists]>235.<![endif]>C. W.Jang, D. H. Shin, and S.-H. Choi, “Bifunctional enhancement of photodetectionand photovoltaic parameters in graphene/porous-Si heterostructures by employinginterfacial hexagonal boron nitride and bathocuproine back-surface passivationlayer”, Journal of Materials Chemistry C 10, 15913 (2022).

<![if !supportLists]>234.<![endif]>C. W.Jang, D. H. Shin, and S.-H. Choi, “High-photoresponseand broadband graphene/WS₂/porous-Si heterostructurephotodetectors”, ACS Applied Nano Materials 5, 13260 (2022).

<![if !supportLists]>233.<![endif]>C. W.Jang, D. H. Shin, and S.-H. Choi, “Remarkable noise reduction in high-stabilityself-powered doped-graphene/Si-quantum-dots broadband photodetectors by usinggraphene quantum dots as an interlayer”, ACS Sustainable Chemistry &Engineering 10, 9872 (2022).

<![if !supportLists]>232.<![endif]>J. S. Ko, C. W. Jang, W. J. Lee, J. K.Kim, H. K. Kim, B. Liu, Y. Lu, J. A. Crosse, P. Moon, S. Kim, andS.-H. Choi, “Blue-shifted and strongly-enhancedlight emission in transition-metal dichalcogenide twisted heterobilayers”, NPJ 2D Materials & Applications 6, 36 (2022).

<![if !supportLists]>231.<![endif]>W. J.Lee, Y. A. Salawu, H.-J. Kim, C. W. Jang, S. Kim, T. Ratcliff, R. G. Elliman,Z. Yue, X. Wang, S.-E. Lee, M.-H. Jung, J.-S. Rhyee, and S.-H. Choi, “Possiblepermanent Dirac- to Weyl-semimetal phase transition by ion implantation, NPG Asia Materials 14, 31 (2022).

<![if !supportLists]>230.<![endif]>C. W.Jang, W. J. Lee, J. K. Kim, S. M. Park, S. Kim, and S.-H. Choi, “Growth of two-dimensional Janus MoSSe by in-situ single processwithout initial or follow-up treatments”, NPG Asia Materials 14, 15 (2022).

<![if !supportLists]>229.<![endif]>C. W.Jang and S.-H. Choi, “Self-powered semitransparent/flexibledoped-graphene/WS₂ vertical-heterostructure photodetectors”, Journalof Alloys & Compounds 901,163685 (2022).

2021

<![if !supportLists]>228.<![endif]>C. W. Jang, D. H. Shin, and S.-H. Choi, “Photostableelectron-transport-layer-free flexible graphene quantum dots/perovskite solarcells by employing bathocuproine interlayer”, Journal of Alloys & Compounds886, 161355 (2021).

<![if !supportLists]>227.<![endif]>C. W. Jang, D. H. Shin, and S.-H. Choi, “Porous silicon solar cells with 13.66 % efficiencyachieved by employing graphene-quantum-dots interfacial layer, doped-grapheneelectrode, and bathocuproine back-surface passivation layer”, Journal of Alloys & Compounds 877, 160311 (2021).

<![if !supportLists]>226.<![endif]>C. W. Jang, H. Kim, M. K. Nazeeruddin,D. H. Shin, and S.-H. Choi, “Piezo-electric and -phototroniceffects of perovskite 2D/3D heterostructures”, Nano Energy 84, 105899 (2021).

<![if !supportLists]>225.<![endif]>J. S. Ko, D. H. Shin, W. J. Lee, C. W. Jang, S. Kim,and S.-H. Choi, “All-two-dimensional semitransparentand flexible photodetectors employing graphene/MoS₂/graphenevertical heterostructures”, Journal of Alloys & Compounds 864, 158118 (2021).

<![if !supportLists]>224.<![endif]>D. H. Shin, C. W. Jang, J. S. Ko, and S.-H. Choi,“Enhancement of efficiency and stability in organic solar cells by employingMoS₂ transport layer, graphene electrode, and graphene quantumdots-added active layer”, Applied Surface Science 538, 148155 (2021).

2020

<![if !supportLists]>223.<![endif]>C. W. Jang, D. H. Shin, J. S. Ko, and S.-H. Choi,“Performance enhancement of graphene/porous Si solar cells by employinglayer-controlled MoS₂”, Applied Surface Science 532, 147460 (2020).

<![if !supportLists]>222.<![endif]>D. H. Shin, S. H. Shin, and S.-H. Choi, “Self-powered andflexible perovskite photodiode/solar cell bifunctional devices with MoS₂hole transport layer”, Applied Surface Science 514, 145880 (2020).

<![if !supportLists]>221.<![endif]>D. H. Shin, J. S. Ko, S. K. Kang, and S.-H. Choi,“Enhanced flexibility and stability in perovskite photodiode-solar cell nanosystem by using MoS₂ electron transportlayer”, ACS Applied Materials & Interfaces 12, 4586 (2020).

<![if !supportLists]>220.<![endif]>D. H. Shin, D. H. Jung, Y. Kim, C. Lee, X. Wang, and S.-H. Choi,“High-speed heterojunction photodiodes made of single- or multiple-layer MoS₂directly-grown on Si quantum dots”, Journal of Alloys & Compounds 820, 153074 (2020).

<![if !supportLists]>219.<![endif]>D. H. Shin, S. H. Shin, S. Kim, and S.-H. Choi,“High-performance and -stability graphene quantum dots-mixed conductingpolymer/porous Si hybrid solar cells with titanium oxide passivation layer”,Nanotechnology 31, 095202 (2020).

2019

<![if !supportLists]>218.<![endif]>D. H.Shin, S. H. Shin, S. G. Lee, S. Kim, and S.-H. Choi, “High-detectivity/-speed flexibleand self-powered graphene quantum dots/perovskite photodiodes”, ACSSustainable Chemistry & Engineering 7, 19961 (2019).

<![if !supportLists]>217.<![endif]>S. Heo, G. Seo, K. T. Cho, Y. Lee, S. Paek, S. Kim, M.Seol, S. H. Kim, K. Kim, J. Park, J. Lee, L. Lechner, T. Rodgers, D. Lee, S.-H.Choi, and M. K. Nazeeruddin, “Dimensionallyengineered perovskite heterostructure for photovoltaic optoelectronicapplications”, Advanced Energy Materials 9,1902470 (2019).

<![if !supportLists]>216.<![endif]>S. S. Kang, D.-M. Geum, K. Kwak, J.-H. Kang, C.-H.Shim, H. Y. Hyun, S. H. Kim, W. J. Choi, S.-H. Choi, M.-C. Park, and J. D.Song, “InAs on GaAs Photodetectors Using Thin InAlAsGraded Buffers and Their Application to Exceeding Short-Wave Infrared Imagingat 300 K”, ScientificReports 9, 12875 (2019).

<![if !supportLists]>215.<![endif]>S. H. Shin, D. H. Shin, and S.-H. Choi, “Enhancementof stability of inverted flexible perovskite solar cells by employinggraphene-quantum-dots hole transport layer and graphene transparent conductiveelectrode co-doped with gold nanoparticles and bis(trifluoromethanesulfonyl)-amide”, ACSSustainable Chemistry & Engineering 7, 13178 (2019).

<![if !supportLists]>214.<![endif]>D. H. Shin, J. H. Kim, D. H. Jung, and S.-H. Choi,“Graphene-nanomesh transparent conductiveelectrode/porous-Si Schottky-junction solar cells, Journal of Alloys & Compounds 803, 958 (2019).

<![if !supportLists]>213.<![endif]>D. H. Shin, J. M. Kim, S. H. Shin, and S.-H. Choi,“Highly-flexible graphene transparent conductive electrode/perovskite solarcells with graphene quantum dots-doped PCBM electron transport layer”, Dyes andPigments 170, 107630 (2019).

<![if !supportLists]>212.<![endif]>D. H. Shin, D. H. Jung, and S.-H. Choi,“High-detectivity and -stability multilayer-graphene/Si-quantum-dotphotodetectors with TiO_x back-surfacepassivation layer”, Dyes and Pigments 170,107587 (2019).

<![if !supportLists]>211.<![endif]>G. J. Lee, E. H. Choi, S.-H. Nam, J. S. Lee, J.-H.Boo, S. D. Oh, S.-H. Choi, J.-H. Cho, and M.-H. Yoon, “Optical SensingProperties of ZnO Nanoparticles Prepared by SprayPyrolysis”, Journal of Nanoscience and Nanotechnology 19, 1048 (2019).

<![if !supportLists]>210.<![endif]>C. W. Jang, D. H. Shin, and S.-H. Choi,“Highly-flexible and -stable deep-ultraviolet photodiodes made of graphenequantum dots sandwiched between graphene layers”, Dyes and Pigments 163, 238 (2019).

<![if !supportLists]>209.<![endif]>S. Kim, S. H. Shin, and S.-H. Choi, “N-i-p-typeperovskite solar cells employing n-type graphene transparent conductiveelectrodes”, Journal of Alloys &Compounds 786, 614 (2019).

<![if !supportLists]>208.<![endif]>J. M. Kim, S. Kim, and S.-H. Choi, “High-performance n-i-p-typeperovskite photodetectors employing graphene transparent conductive electrodesn-type-doped with amine-group molecules”, ACSSustainable Chemistry & Engineering 7, 734 (2019).

<![if !supportLists]>207.<![endif]>C. W. Jang, J. M. Kim, and S.-H. Choi, “Lamination-producedsemi-transparent/flexible perovskite solar cells with doped-graphene anode andcathode”, Journal of Alloys &Compounds 775, 905 (2019).

2018

<![if !supportLists]>206.<![endif]>S. Kang, S. I. Park, S. H. Shin, C.-H. Shim, S.-H.Choi, and J. D. Song, “High-quality 100.3 nm-thick InSbfilms on GaAs (001) substrates with In_xAl_1-xSbcontinuously graded buffer layer”, ACS Omega 3, 14562 (2018).

<![if !supportLists]>205.<![endif]>S. W. Hwang, J. Kim, and S.-H. Choi, “High-performance core/shell InGaN/GaN radialmulti-quantum-well nanowire solar cells non-catalytically grown on Si wafers”, J. Korean Phys.Soc. 73, 912 (2018).

<![if !supportLists]>204.<![endif]>C. W.Jang, S. W. Hwang, S. H. Shin, and S.-H. Choi, “Significantly-enhancedstabilities in flexible hybrid organic-inorganic perovskite resistive random access memories by employing multilayer graphenetransparent conductive electrodes”, J. Korean Phys. Soc. 73, 934 (2018).

<![if !supportLists]>203.<![endif]>D. H. Shin, G. Y. Kwak, J. M. Kim, C. W. Jang, S.-H. Choi, and K.J. Kim, “Remarkable enhancement of stability in high-efficiency Si-quantum-dotheterojunction solar cells by employing bis(trifluoromethanesulfonyl)-amide as a dopant for graphenetransparent conductive electrodes”, Journal of Alloys & Compounds 773, 913 (2018).

<![if !supportLists]>202.<![endif]>D. H.Shin and S.-H. Choi, “Recent studies of semitransparentsolar cells”, Coatings 8, 329(2018).

<![if !supportLists]>201<![endif]>.D. H. Shin, J. H. Kim, and S.-H. Choi, “High-performanceconducting polymer/Si nanowires hybrid solar cells using multilayer-graphenetransparent conductive electrode and back surface passivation layer”, ACSSustainable Chemistry & Engineering 6, 12446 (2018).

<![if !supportLists]>200.<![endif]>J. M. Kim, D. H. Shin, and S.-H. Choi, “High-performanceflexible perovskite photodiodes employing doped multilayer-graphene transparentconductive electrodes”, Nanotechnology 29, 425203 (2018).

<![if !supportLists]>199.<![endif]>D. H. Shin and S.-H. Choi, “Graphene-basedsemiconductor heterostructures for photodetectors”, Micromachines 9, 350 (2018).

<![if !supportLists]>198.<![endif]>D. H. Shin and S.-H. Choi, “Use of graphene for solarcells”, J. Korean Phys.Soc. 72, 1442(2018).

<![if !supportLists]>197.<![endif]>J. M. Kim, C. W. Jang, J. H. Kim, S. Kim, and S.-H.Choi, “Use of AuCl₃-doped graphene as a protecting layer forenhancing the stabilities of inverted perovskite solar cells”, Applied SurfaceScience 455, 1131 (2018).

<![if !supportLists]>196.<![endif]>H. Wahab, C. Jansing, H.-Ch Mertins, J. H. Kim,S.-H. Choi, A. Gaupp, and H. Timmers, “Theidentification and characterisation of carbonaceous interface layers ofgraphene using polarisation-dependent X-ray reflectometry”, Carbon 137,252 (2018)..

<![if !supportLists]>195.<![endif]>D. H. Shin, C. W. Jang, J. M. Kim, and S.-H. Choi,“Self-powered Ag-nanowires-doped graphene/Si quantum dots/Si heterojunctionphotodetectors”, Journal of Alloys & Compounds 758, 32 (2018).

<![if !supportLists]>194.<![endif]>D. H. Shin, J. M. Kim, C. W. Jang, J. H. Kim, S.Kim, and S.-H. Choi, “Effect of layer number and metal-chloride dopant onmultiple layers of graphene/porous Si solar cells”, J. App. Phys. 123,123101 (2018).

<![if !supportLists]>193.<![endif]>S. Kim, H. S. Lee, J. M. Kim, S. W. Seo, J. H. Kim, C.W. Jang, and S.-H. Choi, “Effect of layer number on flexible perovskite solarcells employing multilayers of graphene as transparent conductive electrodes”,Journal of Alloys & Compounds 744,404 (2018).

<![if !supportLists]>192.<![endif]>D. H. Shin, S. W. Seo, J. M. Kim, H. S. Lee, andS.-H. Choi, “Graphene transparent conductive electrodes doped with graphenequantum dots-mixed silver nanowires for highly-flexible organic solar cells”, Journal of Alloys & Compounds 744, 1 (2018).

<![if !supportLists]>191.<![endif]>D. H. Shin, C. W. Jang, H. S. Lee, S. W. S, andS.-H. Choi, “Semitransparent flexible organic solarcells employing doped-graphene layers as anode and cathode electrodes”, ACS Applied Materials & Interfaces 10, 3596 (2018).

<![if !supportLists]>190.<![endif]>J. M. Kim, S. Kim, S. W. Hwang, C. O. Kim, D. H. Shin,J. H. Kim, C. W. Jang, S. S. Kang, E. Hwang, S.-H. Choi, S. H. EI-Gohary, andK. M. Byun, “Strong enhancement of emission efficiency in GaNlight-emitting diodes by plasmon-coupled light amplification of graphene”,Nanotechnology 29, 055201 (2018).

<![if !supportLists]>189.<![endif]>J. M. Kim, S. Kim, D. H. Shin, S. W. Seo, H. S.Lee, J. H. Kim, C. W. Jang, S. S. Kang, S.-H. Choi, G. Y. Kwak, K. J. Kim, H.Lee, and H. Lee, “Si-quantum-dot heterojunction solar cells with 16.2%efficiency achieved by employing doped-graphene transparent conductiveelectrodes”, Nano Energy 43, 124 (2018).

<![if !supportLists]>188.<![endif]>D. H. Shin, C. W. Jang, H. S. Lee, S. W. Seo, S. Kim,and S.-H. Choi, “Graphene/Si solar cells employing triethylenetetramine dopantand polymethylmethacrylate antireflection layer”, Applied Surface Science 433, 181 (2018).

2017

<![if !supportLists]>187.<![endif]>D. H.Shin, C. W. Jang, J. H. Kim, J. M. Kim, H. S. Lee, S. W. Seo, S. Kim, and S.-H.Choi, “Enhancement of efficiency and long-termstability in graphene/Si-quantum-dot heterojunction photodetectors by employingbis(trifluoromethanesulfonyl)-amide as a dopantfor graphene”, Journal ofMaterials Chemistry C 5, 12737(2017).

<![if !supportLists]>186.<![endif]>S. W.Seo, H. S. Lee, D. H. Shin, J. H. Kim, C. W. Jang, J. M. Kim, S. Kim, and S.-H.Choi, “Highly-stable and flexible graphene/(CF₃SO₂)₂NH/graphenetransparent conductive electrodes for organic solar cells”, Nanotechnology 28, 425203 (2017).

<![if !supportLists]>185.<![endif]>S.-H. Choi, “Graphene-Based Vertical-Junction Diodesand Applications”, J. Korean Phys. Soc. 71, 311 (2017).

<![if !supportLists]>184.<![endif]>J. H. Kim, D. H. Shin, H. S. Lee, C. W. Jang, J. M. Kim,S. W. Seo, S. Kim, and S.-H. Choi, “Enhancement of efficiency ingraphene/porous silicon solar cells by co-doping of graphene with goldnanoparticles and bis(trifluoromethanesulfonyl)-amide”,Journal of Materials Chemistry C 5,9005 (2017).

<![if !supportLists]>183.<![endif]>D. H. Shin, J. M. Kim, S. W. Seo, J. H. Kim, S. Kim,and S.-H. Choi, “Si heterojunction solar cells employing graphene transparentconductive electrodes co-doped with gold chlorides and silver nanowires”,Journal of Alloys & Compounds 726,1047 (2017).

<![if !supportLists]>182.<![endif]>S.-H. Shin, Y. E. Bae, H. K. Moon, J. Kim, S.-H. Choi,Y. Kim, H. J. Yoon, M. H. Lee, and J. Nah, “Formation of triboelectric series via atomic level surfacefunctionalization for triboelectric energy harvesting”, ACS Nano 11, 6131 (2017).

<![if !supportLists]>181.<![endif]>J. M. Kim, S. W. Seo, D. H. Shin, H. S. Lee, J. H.Kim, C. W. Jang, S. Kim, and S.-H. Choi, “Ag-nanowires-doped graphene/SiSchottky-junction solar cells encapsulated with another graphene layer”, Curr.Appl. Phys. 17, 1136 (2017).

<![if !supportLists]>180.<![endif]>D. H. Shin, J. H. Kim, J. H. Kim, C. W. Jang, S. W.Seo, H. S. Lee, S. Kim, and S.-H. Choi, “Graphene/porous siliconSchottky-junction solar cells”, Journal of Alloys & Compounds 715, 291 (2017).

<![if !supportLists]>179.<![endif]>J. H. Heo, D. H. Shin, S. Kim, M. H. Jang, M. H. Lee,S. W. Seo, S.-H. Choi, and S. H. Im, “Highlyefficient CH₃NH₃PbI₃ perovskite solar cellsprepared by AuCl₃-doped graphene transparent conducting electrodes”,Chem. Eng. J. 323, 153 (2017).

<![if !supportLists]>178.<![endif]>C. W. Jang, J. H. Kim, D. H. Lee, D. H. Shin, S. Kim,S.-H. Choi, E. Hwang, and R. G. Elliman, “Effect of stopping-layer-assistedboron-ion-implantation on the electrical properties of graphene: interplaybetween strain and charge doping”, Carbon 118,343 (2017).

<![if !supportLists]>177.<![endif]>S.-H. Choi, “Unique properties of graphene quantumdots and their applications in photonic/electronic devices”, J. Phys. D 50, 103002 (2017).

2016

<![if !supportLists]>176.<![endif]>H. Wahab, R. Haverkamp, J. H. Kim, J. M. Cadogan,H.-Ch. Mertins, S.-H. Choi, and H. Timmers, “Thestructural response of graphene on copper to surface- and interfacial-oxygen”,Carbon 110, 414 (2016).

<![if !supportLists]>175.<![endif]>S. W.Hwang, B. Lee, and S.-H. Choi, “Formation properties of InGaNactive layer for high-efficient InGaN/GaN multi-quantum-well-nanowires light-emitting diodes”, J. Korean Phys.Soc. 69, 772(2016).

<![if !supportLists]>174.<![endif]>S. W. Hwang,B. Lee, H. Shin, and S.-H. Choi, “Non-catalytic Direct Synthesis of Graphene onSi (111) Wafers by Inductively-coupled Plasma Chemical Vapor Deposition”, J. Korean Phys.Soc. 69, 536(2016).

<![if !supportLists]>173.<![endif]>J. Kim, S.-Y. Park, S. Kim, D. H. Lee, J. H. Kim, J. M. Kim, H.Kang, J.-S. Han, J. W. Park, H. Lee, and S.-H. Choi, “Precise and selectivesensing of DNA-DNA hybridization by graphene/Si-nanowires diode-typebiosensors”, Scientific Reports 6,31984 (2016).

<![if !supportLists]>172.<![endif]>K. W.Lee, C. W. Jang, D. H. Shin, J. M. Kim, S. S. Kang, D. H. Lee, S. Kim, S.-H.Choi, and E. Hwang, “Light-induced negative differential resistance ingraphene/Si-quantum-dot tunneling diodes”, ScientificReports 6, 30669 (2016).

<![if !supportLists]>171.<![endif]>C. Jansing, H. -Ch. Mertins, M. Gilbert, H. Wahab, H.Timmers, S.-H. Choi, A. Gaupp, M. Krivenkov, A. Varykhalov, O. Rader, D. Legut,and P. M. Oppeneer, “X-raynatural birefringence in reflection from graphene”, Phys. Rev. B 94,045422 (2016)..

<![if !supportLists]>170.<![endif]>S. W. Hwang and S.-H. Choi, “Successful fabrication ofGaN epitaxial layer on non-catalytically-growngraphene”, Bull. Korean Chem. Soc. 37,1004 (2016).

<![if !supportLists]>169.<![endif]>S. Kim,D. H. Shin, J. Kim, C. W. Jang, S. S. Kang, J. M. Kim, J. H. Kim, D. H. Lee, J.H. Kim, S.-H. Choi, and S. W. Hwang, “Energy transfer from an individual silicananoparticle to graphene quantum dots and resulting enhancementof photodetector responsivity”, Scientific Reports 6, 27145 (2016).

<![if !supportLists]>168.<![endif]>S. W. Hwang and S.-H. Choi, “Effect of defects inoxide templates on non-catalytic growth of GaNnanowires for high-efficient light-emitting diodes”, J. Korean Phys. Soc. 68, 864(2016).

<![if !supportLists]>167.<![endif]>S. Y. Hamh, S.-H. Park, S.-K. Jeng, J. H. Jeon, S.-H. Chun, J. H.Jeon, S. J. Kahng, K. Yu, E. J. Choi, S. Kim, S.-H. Choi, N. Bansal, S. Oh, J.S. Kim, and J. S. Lee, “Surface and interface states of Bi₂Se₃thin films investigated by optical second harmonic generation and terahertzemission”, Appl. Phys. Lett. 108, 051609 (2016).

<![if !supportLists]>166.<![endif]>S. Kim, D. H. Shin, J. H. Kim, C. W. Jang, J. W. Park,H. Lee, S.-H. Choi, S. H. Kim, K.-J. Yee, N. Bansal, and S. Oh, “Resonanceeffects in thickness-dependent ultrafast carrier and phonon dynamics oftopological insulator Bi₂Se₃”, Nanotechnology 27, 045705 (2016).

<![if !supportLists]>165.<![endif]>S. D. Oh, J. Kim, D. H. Lee, J. H. Kim, C. W. Jang, S. Kim, andS.-H. Choi, “Structural and optical characteristics of graphene quantum dotssize-controlled and well-aligned on a large scale by polystyrene-nanospherelithography”, J. Phys. D 49, 025308(2016).

2015

<![if !supportLists]>164.<![endif]>S. Y. Hamh, S.-H. Park, J. Han, J. H.Jeon, S.-J. Kahng, S. Kim, S.-H. Choi, N. Bansal, S. Oh, J. Park, J. S. Kim, J.M. Kim, D. Y. Noh, and J. S. Lee, “Anisotropic terahertz emission from Bi₂Se₃thin films with inclined crystal planes”, Nanoscale Research Letters 10, 489 (2015).

<![if !supportLists]>163.<![endif]>J. Kim, D. H. Lee, J. H. Kim, and S.-H. Choi, “Graphene-AssistedChemical Etching of Silicon Using Anodic Aluminum Oxides as PatterningTemplates”, ACS Applied Materials & Interfaces 7, 24242 (2015).

<![if !supportLists]>162.<![endif]>S. Kim, D. H. Shin, C. O. Kim, S. S. Kang, K. W. Lee, J. Kim, S.-H.Choi, and S. W. Hwang, “Effect of nitrogen doping on the structural and opticalvariations of graphene quantum dots by hydrazine treatment”, J. KoreanPhys. Soc. 67, 746 (2015).

<![if !supportLists]>161.<![endif]>J. H. Kim, J. Kim, S. D. Oh, S. Kim, and S.-H. Choi, “Sequentialstructural and optical evolution of MoS₂ by chemical synthesis andexfoliation”, J.Korean Phys. Soc. 66, 1852 (2015).

<![if !supportLists]>160.<![endif]>D. H. Shin, S. Kim, J. M. Kim, C. W. Jang, J. H. Kim, K. W. Lee, J.Kim, S. D. Oh, D. H. Lee, S. S. Kang, C. O. Kim, S.-H. Choi, and K. J. Kim,“Graphene/Si-quantum-dot heterojunction diodes showing high photosensitivitycompatible with quantum confinement effect”, Advanced Materials 27, 2614 (2015).

<![if !supportLists]>159.<![endif]>D. H. Shin, S. Kim, J. M. Kim, C. W. Jang, J. H. Kim, and S.-H.Choi, “Clear manifestation of phonon anomaly in single-layer graphene bychemical p-type doping”, J. Phys. D 48,015304 (2015).

<![if !supportLists]>158.<![endif]>C. W. Jang, J. M. Kim, J. H. Kim, D. H. Shin, S. Kim, and S.-H.Choi, “Degradation reduction and stability enhancement of p-type graphene byRhCl₃ doping”, J. Alloys & Compounds 521, 1 (2015).

2014

<![if !supportLists]>157.<![endif]>J. Kim, S. S. Joo, K. W. Lee, J. H. Kim, D. H. Shin, S. Kim, andS.-H. Choi, “Near-ultraviolet-sensitive graphene/porous siliconphotodetectors”, ACS Applied Materials & Interfaces 6, 20880 (2014).

<![if !supportLists]>156.<![endif]>J.-W. Park, H. S. So, S. Kim, S.-H. Choi, H. Lee, J. Lee, C. Lee,and Y. Kim, “Optical Properties of Large-area Ultrathin MoS₂ Films:Evolution From a Single Layer To Multilayers”, J.Appl. Phys. 116, 183509 (2014).

<![if !supportLists]>155.<![endif]>C. O. Kim, S. W. Hwang, S. Kim, D. H. Shin, S. S. Kang, J. M. Kim,C. W. Jang, J. H. Kim, K. W. Lee, S.-H. Choi, and E. Hwang, “High-performancegraphene-quantum-dot photodetectors”, Scientific Reports 4, 5603 (2014).

<![if !supportLists]>154.<![endif]>J. Kim, S. D. Oh, J. H. Kim, D. H. Shin, S. Kim, and S.-H. Choi,“Graphene/Si-nanowire heterostructure molecular sensors”, Scientific Reports 4, 5384 (2014).

<![if !supportLists]>153.<![endif]>S. S. Joo, J. Kim, S. S. Kang, S. Kim, S.-H. Choi, and S. W. Hwang,“Graphene-quantum-dot nonvolatile charge-trap flash memories”, Nanotechnology 25, 255203 (2014).

<![if !supportLists]>152.<![endif]>D. H. Shin, S. Kim, C. W. Jang, J. M. Kim, J. H. Kim, and S.-H.Choi, “In-situ monitoring of AuCl₃-doping and dedopingbehaviors in graphene”, J. Korean Phys. Soc. 64, 1327 (2014).

<![if !supportLists]>151.<![endif]>A. R. Lee, J. Kim, S.-H. Choi, and J. C. Shin, “Formation of three dimensional GaAs microstructures by combination of wetand metal-assisted chemical etching”, Phys. Status Solidi RRL 8, 345 (2014).

<![if !supportLists]>150.<![endif]>S. S. Kang, S. S. Joo, S. Kim, and S.-H. Choi, “Effect of sizevariation on the cathodoluminescence characteristics of graphene quantum dots”,Curr. Appl. Phys. 14, S111 (2014).

<![if !supportLists]>149.<![endif]>D. H. Shin, K. W. Lee, J. S. Lee, J. H. Kim, S. Kim, andS.-H. Choi, “Enhancement of the effectiveness of graphene as a transparentconductive electrode by AgNO₃ doping”, Nanotechnology 25, 125701 (2014).

<![if !supportLists]>148.<![endif]>C. O. Kim, S. Kim, D. H. Shin, S. S. Kang, J. M. Kim,C. W. Jang, S. S. Joo, J. S. Lee, J. H. Kim, S.-H.Choi, and E. Hwang, “High photoresponsivity in an all-graphene p-nvertical-junction photodetector”, Nature Communications 5, 3249 (2014).

<![if !supportLists]>147.<![endif]>J. S. Lee, C. W. Jang, J. H. Kim, D. H. Shin, S. Kim, S.-H. Choi, K.Belay, and R. G. Elliman, “Graphene Synthesis by C implantation into Cu foils”,Carbon 66, 267 (2014).

2013

<![if !supportLists]>146.<![endif]>C. W.Jang, J. H. Kim, J. M. Kim, D. H. Shin, S. Kim, and S.-H. Choi,“Rapid-thermal-annealing surface treatment for restoring the intrinsicproperties of graphene field-effect transistors”, Nanotechnology 24, 405301 (2013).

<![if !supportLists]>145.<![endif]>S. Kim,D. H. Shin, C. O. Kim, S. S. Kang, J. M. Kim, C. W. Jang, S. S. Joo, J. S. Lee,J. H. Kim, S.-H. Choi, and E. Hwang, “Graphene p-n Vertical Tunneling Diodes”,ACS Nano 7, 5168 (2013).

<![if !supportLists]>144.<![endif]>D. H. Shin, J. M. Kim, C. W. Jang, J. H. Kim, S. Kim, and S.-H.Choi, “Annealing effects on the characteristics of AuCl₃-dopedgraphene”, J. Appl. Phys. 113,064305 (2013).

<![if !supportLists]>143.<![endif]>S. Kim,D. H. Shin, C. O. Kim, S. S. Kang, S. S. Joo, S.-H. Choi, S. W. Hwang, andC. Sone, “Size-dependence ofRaman scattering from graphene quantum dots: interplay between shape andthickness”, Appl.Phys. Lett. 102, 053108 (2013).

2012

<![if !supportLists]>142.<![endif]>H. Jang,J.-W. Park, S. Kim, S.-H. Choi, and H. Lee, “Optical Study of Bulk andThin-film Tin Dioxide”, J. Korean Phys. Soc. 61, 2005 (2012).

<![if !supportLists]>141.<![endif]>D. Y.Shin, J. H. Park, S. Kim, S.-H. Choi, and K. J. Kim, “Graded-sizeSi-nanocrystal-multilayer solar cells”, J. Appl. Phys. 112, 104304 (2012).

<![if !supportLists]>140.<![endif]>C. O. Kim, S. Kim, D. H. Shin,D. Y. Shin, S.-H. Choi, S. W. Hwang, N.-G. Cha, and S. Kang, “Effect of Gadoping concentration on the luminescence efficiency of GaNlight-emitting diodes with Ga-doped ZnO contacts”, Appl.Phys. B 109, 283 (2012).

<![if !supportLists]>139.<![endif]>S. Kim,D. H. Shin, C. O. Kim, S. S. Kang, J. M. Kim, S.-H. Choi, L.-H. Jin, Y.-H. Cho, S. W. Hwang, and C.Sone, “Size-dependentradiative decay processes in graphene quantum dots”, Appl. Phys. Lett. 101, 163103 (2012).

<![if !supportLists]>138.<![endif]>S. Kim, S. W. Hwang, M.-K. Kim,D. Y. Shin, D. H. Shin, C. O. Kim, S. B. Yang, J. H. Park, E. Hwang, S.-H. Choi,G. Ko, S. Sim, C. Sone, H. J. Choi, S. Bae, B. H. Hong, “Anomalous behaviors ofvisible luminescence from graphene quantum dots: interplay betweensize and shape”, ACS Nano 6, 8203 (2012).

<![if !supportLists]>137.<![endif]>C. O.Kim, D. H. Shin, S.Kim, and S.-H. Choi,“Effect of Al concentration on structural,electrical, and optical properties of transparent Al-doped ZnO”, J. Korean Phys. Soc. 61, 599 (2012).

<![if !supportLists]>136.<![endif]>D. H. Shin, S. B. Yang, D. Y.Shin, C. O. Kim, S. Kim, S.-H. Choi, and S.-H. Paek, “Graphene synthesis from graphite/Ni composite films grown by sputtering”,J. Korean Phys. Soc. 61, 563 (2012).

<![if !supportLists]>135.<![endif]>SungKim, Dong Hee Shin, and Suk-Ho Choi, “Ultrafastphotoluminescence from freestanding Si nanocrystals”, Appl. Phys. Lett. 100, 253103 (2012).

<![if !supportLists]>134.<![endif]>Jae Hee Park, Dong HeeShin, Chang Oh Kim, Suk-Ho Choi, and Kyung Joong Kim, “Photovoltaic andLuminescence Properties of Sb- and P-Doped Quantum Dots”, J. KoreanPhys. Soc. 60, 1616 (2012).

<![if !supportLists]>133.<![endif]>Sung Kim, Dong Hee Shin, Dong Yeol Shin,Chang Oh Kim, Jae Hee Park, Seung Bum Yang, Suk-HoChoi, Seung Jo Yoo, and Jin-Gyu Kim, “Luminescence properties of Sinanocrystals fabricated by ion beam sputtering and annealing”, J.Nanomaterials, 2012, 572746 (2012).

<![if !supportLists]>132.<![endif]>Keun Yong Lim, Jae Hee Park, Sung Kim, andSuk-Ho Choi, “Effect of oxygen content on the resistive switching memorycharacteristics of TiO_x films”, J. KoreanPhys. Soc. 60, 791 (2012).

<![if !supportLists]>131.<![endif]>Sung Kim, Dong Hee Shin, Chang Oh Kim,Seung Hui Hong, and Suk-Ho Choi, “Size-dependenteffect of energy transfer on photoluminescence from Si nanocrystals in closeproximity with ZnO films”, Thin Solid Films 520, 3000 (2012).

2011

<![if !supportLists]>130.<![endif]>C. O. Kim, D. H. Shin, S. Kim, S.-H. Choi, K. Belay, and R. G. Elliman,“Effect of (O, As) dual implantation on p-type doping of ZnOfilms”, J. Appl. Phys. 110, 103708(2011).

<![if !supportLists]>129.<![endif]>J.-W. Park, H. Jang, S. Kim, S.-H. Choi, H. Lee, J. Kang, and S.-H.Wei, “Microstructure, optical Property, and electronic band structure ofcuprous oxide thin films”, J. Appl. Phys. 110,103503 (2011).

<![if !supportLists]>128.<![endif]>Kwang Jun Ahn, Sung Won Hwang, Dong HeeShin, Chang Oh Kim, Seung Hui Hong, Min Choul Kim, Jungkil Kim, Geun Yong Lim, Sung Kim, Suk-Ho Choi, GunnKim, and Byung Hee Hong, Ahn et al. Reply:Comment on “Plasmon-Enhanced Ultraviolet Photoluminescence from Hybridstructures of Graphene/ZnO Films”, Phys. Rev. Lett. 107, 159702 (2011).

<![if !supportLists]>127.<![endif]>S. H. Hong, Y. S. Kim, W. Lee, Y. H. Kim, J. Y. Song, J. S. Jang, J.H. Park, S.-H. Choi, and K. J. Kim, “Activedoping of B in silicon nanostructures and development of a Si quantum dot solarcell”, Nanotechnology 22,425203 (2011).

<![if !supportLists]>126.<![endif]>Jong-Gul Yoon, Sung Woo Cho, W. S. Choi, Dae Yeol Kim, H. Chang,Chang Oh Kim, J. Lee, H. Jeon, Suk-Ho Choi, and T. W. Noh, “Electroluminescencefrom n-nisotype heterostructures of graded-band-gap ZnMgO:Al and ZnO films on platinized Si”, J. Phys. D 44, 415402 (2011).

<![if !supportLists]>125.<![endif]>Sung Kim, Dong Hee Shin, Chang Oh Kim,Seung Hui Hong, and Suk-Ho Choi, “Formation Characteristics of Silica NanowiresGrown by Annealing Double Layers of ZnO/SiO_x without Precursors”, J. KoreanPhys. Soc. 59, 281 (2011).

<![if !supportLists]>124.<![endif]>Min Choul Kim, Keun Yong Lim, Chang OhKim, and Suk-Ho Choi, “Effect of doping concentration on the resistiveswitching memories of Cu-doped ZnO films”, J. KoreanPhys. Soc. 59, 304 (2011).

<![if !supportLists]>123.<![endif]>Chang Oh Kim, Dong Hee Shin, and Suk-HoChoi, “Strongly-enhanced near-band-edgephotoluminescence of Nb-implanted ZnO films”,J. Crystal Growth326, 42 (2011).

<![if !supportLists]>122.<![endif]>Jung Kil Kim,Suk-Ho Choi, Young-Hun Kim, and Woo Lee, “Curved SiliconNanowires with Ribbon-Like Cross-Sections by Metal-Assisted Chemical Etching”, ACS Nano 5,5242 (2011).

<![if !supportLists]>121.<![endif]>Sung Kim, Seung Hui Hong, Jae Hee Park,Dong Yeol Shin, Dong Hee Shin, Suk-Ho Choi, and KyungJoong Kim, “Size- and doping-dependent time-resolved photoluminescence of dopedSi nanocrystals ”,Nanotechnology22, 275205 (2011).

<![if !supportLists]>120.<![endif]>Jung Kil Kim,Hee Han, Young-Hun Kim, Suk-Ho Choi, Jae-Cheon, Kim, and WooLee, “Au/Ag bi-layered metal meshes as Si etching catalyst forcontrolled fabrication of Si nanowires”, ACS Nano 5, 3222 (2011).

<![if !supportLists]>119.<![endif]>Chang Oh Kim, Dong Hee Shin, Suk-Ho Choi,K. Belay, and R. G. Elliman, “Strongenhancement of ultraviolet emission from ZnO films byV implantation”, J. Vac. Sci. & Technol. B 29, 021207 (2011).

<![if !supportLists]>118.<![endif]>Min Choul Kim, Chang Oh Kim, Houng Taek Oh, Suk-Ho Choi, K. Belay, R. G. Elliman, and S. P. Russo,“Nonvolatile memories using deep traps formed in HfO₂ byNb ion implantation”, J. Appl. Phys. 109,053703 (2011).

<![if !supportLists]>117.<![endif]>Dong Hak Kim, Joon Won Park, Chang Oh Kim, HaeyangChung, Suk-Ho Choi, and D. Lim, “Effect of thermal annealing on the propertiesof nonvolatile-memory structures containing high-k La₂O₃ ascharge-trapping layer”, J. Kor. Phys. Soc. 58, 264 (2011).

<![if !supportLists]>116. <![endif]>Seung Hui Hong, Min Choul Kim, Hyoung Taek Oh, Suk-Ho Choi, and Kyung Joong Kim, “Nonvolatilefloating-gate memories using Zr and ZrO₂ nanodots”, J.Nanosci. Nanotechnol. 11, 143 (2011).

2010

<![if !supportLists]>115.<![endif]>Dong Hee Shin, Hyoung TaekOh, Suk-Ho Choi, Young Seok Park, Han-Ki Kim, Jun-Woo Park, and Hosun Lee, “Surface-plasmon-mediated enhancement ofphotoluminescence from hybrid structures of indium zinc oxide/Ag/ indium zincoxide”, J.Kor. Phys. Soc. 56, 1164 (2010).

<![if !supportLists]>114. <![endif]>S. Kim, C. O. Kim, D. H. Shin, S. H. Hong, M. C. Kim, J. Kim, S.-H.Choi, T. Kim, R. G. Elliman, Y.-M. Kim, “Self-assembled growth and luminescenceof crystalline Si/SiO_x core-shellnanowires”, Nanotechnology 21,205601 (2010).

<![if !supportLists]>113. <![endif]>Y. S. Kim, U. R. Lee, J. E. Lee, M. J. Cho, J.-I. Jin, D. H. Shin,S.–H. Choi, and D. H. Choi, “PhotoactiveDeoxyribonucleic Acid (DNA) Bearing Carbazole Moieties and ItsPhotoluminescence Behavior With Ir(III) Complex”, Molecular Crystalsand Liquid Crystals 519, 227(2010).

<![if !supportLists]>112. <![endif]>Keun Yong Lim, Min Choul Kim, Seung HuiHong, Suk-Ho Choi, and Kyung Joong Kim, “Nonvolatile memories using chargetraps in silicon-rich oxides”, J. Appl. Phys. 108, 033708 (2010).

<![if !supportLists]>111. <![endif]>Seung Hui Hong, Jae Hee Park, Dong Hee Shin, Chang Oh Kim, Suk-Ho Choi, and Kyung Joong Kim,“Doping- and size-dependent photovoltaic properties of p-type Si-quantum-dotheterojunction solar cells: correlation with photoluminescence”, Appl. Phys.Lett. 97, 072108 (2010).

<![if !supportLists]>110. <![endif]>Sung Won Hwang, Dong Hee Shin, Chang OhKim, Seung Hui Hong, Min Choul Kim, Jungkil Kim, Geun Yong Lim, Sung Kim, Suk-Ho Choi, KwangJun Ahn, Gunn Kim, Sung Hyun Sim, and Byung HeeHong, “Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid structures ofGraphene/ZnO Films”, Phys. Rev. Lett. 105, 127403 (2010).

<![if !supportLists]>109. <![endif]>Chang Oh Kim, Sung Kim, Hyoung Taek Oh,Suk-Ho Choi, Yoon Shon, Sejoon Lee, Han Na Hwang, andChan-Cuk Hwang, “Effect ofelectrical-conduction properties on magnetic behaviors of Cu-doped ZnO thin films”, Physica B 405, 4678 (2010).

<![if !supportLists]>108.<![endif]>Min Choul Kim, Seung Hui Hong, Suk-HoChoi, and Kyung Joong Kim, “Enhancement of nonvolatile-memory performance usingmultiply-stacked Ge nanodots prepared at room temperature”, J. KoreanPhys. Soc. 57, 742 (2010).

<![if !supportLists]>107.<![endif]>Sung Won Hwang, Dong Hee Shin, Chang OhKim, Seung Hui Hong, and Suk-Ho Choi, “Effect of a Si-nanocrystal layeron the vertical growth of multiwalled carbon nanotubes by using chemical vapordeposition”, J.Kor. Phys. Soc. 57, 1408 (2010).

<![if !supportLists]>106. <![endif]>Joon Won Park, Dong Hak Kim, Suk-Ho Choi, MinchulLee, and D. Lim, “The Role of Carbon Doping in ZnO”, J. KoreanPhys. Soc. 57, 1482 (2010).

2009

<![if !supportLists]>105.<![endif]>Min Choul Kim, PilSeong Jeong, Seung Hui Hong, and Suk-Ho Choi, “Effects of Channel Widthand Length on Si-Nanocrystal Nonvolatile Memory Devices”, J. Kor.Phys. Soc. 54, 131 (2009).

<![if !supportLists]>104.<![endif]>Min Choul Kim, Seung Hui Hong, Hye RyongKim, Sung Kim, Suk-Ho Choi, R. G. Elliman, and S. P. Russo, “Nonvolatilememories using deep traps formed in Al₂O₃ bymetal ion implantation”, Appl. Phys. Lett. 94,112110 (2009).

<![if !supportLists]>103.<![endif]>Sung Kim,Sung Won Hwang, Suk-Ho Choi, R. G. Elliman, Young-MinKim, and Youn-Joong Kim, “Formationcharacteristics and photoluminescence of Ge nanocrystals in HfO₂”,J. Appl.Phys. 105, 106112 (2009).

<![if !supportLists]>102.<![endif]>Sung Kim, Dong Hee Shin, Chang Oh Kim,Sung Won Hwang, Suk-Ho Choi, Seungmuk Ji, and Ja-YongKoo, “Enhanced ultraviolet emission from hybrid structures of single-walledcarbon nanotubes/ZnO films”, Appl.Phys. Lett. 94, 213113 (2009).

<![if !supportLists]>101.<![endif]>Sung Kim, Chang Oh Kim, Sung Won Hwang, and Suk-Ho Choi, “Fabrication and structural characterizationof hybrid nanostructures of ZnO/Si”, J. Kor.Phys. Soc. 54, 2318 (2009).

<![if !supportLists]>100.<![endif]>Pil Seong Jeong,Hye Ryong Kim, Yong-Sik Lee, and Suk-Ho Choi, “Optical and ElectricalCharacterization of Hydrogenated GaInZnO Thin Films”,J.Kor. Phys. Soc. 54, 2378 (2009).

<![if !supportLists]>99. <![endif]>Seung Hui Hong, Min Choul Kim, Hye RyongKim, Suk-Ho Choi, and Kyung Joong Kim, “Nonvolatile memories of Ge nanodots withinZrO₂ ”, J.Kor. Phys. Soc. 54, 2339 (2009).

<![if !supportLists]>98. <![endif]>Min Choul Kim, Sung Kim, Suk-Ho Choi, K.Belay, R. G. Elliman, and S. P. Russo, “Nonvolatile memories using AlO^--implantedAl₂O₃”, IEEEElectron Dev. Lett. 30, 837 (2009).

<![if !supportLists]>97. <![endif]>Hye Ryong Kim, Pil Seong Jeong, Hyoung Taek Oh, and Suk-Ho Choi, “Effect of F^-implantation on Optical and Electrical Properties of GaInZnOThin Films”, J.Kor. Phys. Soc. 55, 636 (2009).

<![if !supportLists]>96. <![endif]>Sung Won Hwang, Dong Hee Shin, Seung HuiHong, and Suk-Ho Choi, “Microscopic characterization of silicon nanocrystalsformed by in-situ annealing”, J. Kor. Phys. Soc. 55, 558 (2009).

<![if !supportLists]>95.<![endif]>Hye Ryong Kim, Sung Kim, ChangOh Kim, and Suk-Ho Choi, “Temperature-dependent negative photoconductivity of ZnO films”, Thin Solid Films 518, 305 (2009).

<![if !supportLists]>94. <![endif]>Jun-Woo Park, Pil-Seong Jeong, Suk-HoChoi, Hosun Lee, Bo Hyun Kong, and Hyung Koun Cho,“Optical and Structural Properties of Ion-implanted InGaZnOThin Films Studied with Spectroscopic Ellipsometry and Transmission ElectronMicroscopy”, Jpn. J. Appl. Phys. 48, 111603 (2009).

<![if !supportLists]>93.<![endif]>Dong HeeShin, Sung Kim, Seung Hui Hong, Suk-Ho Choi, and Kyung Joong Kim, “Control ofamorphous silica nanowire growth by oxygen content of Si-rich oxide”,Nanotechnology 21,045604 (2009).

2008

<![if !supportLists]>92. <![endif]>Sung Kim, Do Kyu Lee, Seung Hui Hong, Sung Hwan Eom,Hyoung Taek Oh, Suk-Ho Choi, Han Na Hwang, and ChanCuk Hwang, “High-efficient ultraviolet emission in phonon-reduced ZnO films: the role of germanium”, J. Appl.Phys. 103, 023514 (2008).

<![if !supportLists]>91. <![endif]>SungKim and Suk-Ho Choi, "Size-dependent correlation of photoluminescencelifetime with Si suboxide states at Si nanocrystal/SiO₂interfaces", J.Kor. Phys. Soc. 52, 462 (2008).

<![if !supportLists]>90. <![endif]>Seung Hui Hong, Min Choul Kim, Pil Seong Jeong, Suk-Ho Choi, Yong-Sung Kim, and KyungJoong Kim, “Nonvolatile memories of Ge nanodots self-assembled by depositingultra-small-amount Ge on SiO₂ at room temperature”, Appl.Phys. Lett. 92, 093124 (2008).

<![if !supportLists]>89. <![endif]>Seung Hui Hong, Min Choul Kim, Pil Seong Jeong, Suk-Ho Choi, and Kyung Joong Kim,“Ge-nanodot multilayer nonvolatile memories”, Nanotechnology 19,305203 (2008).

<![if !supportLists]>88. <![endif]>Sung Kim, Chang Oh Kim, Sung Won Hwang, and Suk-Ho Choi, “Growth andenhanced light emission of hybrid structures of ZnO/Sinanocrystals”, Appl.Phys. Lett. 92, 243108 (2008).

<![if !supportLists]>87. <![endif]>Sung Kim,Do Kyu Lee, Sung Hwan Eom, Chang Oh Kim, and Suk-HoChoi, “Effect of Ge concentration on the TemperatureDependence of Photoluminescence from Ge-doped ZnO”, J. Kor.Phys. Soc. 53, 426 (2008).

<![if !supportLists]>86. <![endif]>Seung Ho Baek, Do Kyu Lee, Tae Dong Kang, Suk-Ho Choi, Hosun Lee, and Sung Hwan Eom,"Optical Properties of Ge-doped ZnO Thin FilmsStudied with Spectroscopic Ellipsometry", J. Kor. Phys. Soc. 53, 451 (2008).

<![if !supportLists]>85. <![endif]>J. Park, D.-K. Lee, D. Lim, H.Lee, and Suk-Ho Choi, “Optical Properties of Thermally AnnealedHafnium Oxide and Their Correlation with Structural Change”, J. Appl.Phys. 104, 033521 (2008).

<![if !supportLists]>84. <![endif]>Sung Kim, Chang Oh Kim, Hyoung Taek Oh,and Suk-Ho Choi, “Strong enhancement ofnear-band-edge photoluminescence from ZnO byassembling ZnO/SiO_xheterostructures”, J.Phys. D41, 235403 (2008).

<![if !supportLists]>83. <![endif]>J. E. Lee, E. D. Do, U R. Lee, M. J. Cho, K. H. Kim, J.-I. Jin, D.H. Shin, Suk-Ho Choi, D. H. Choi, “Effect of binding mode on thephotoluminescence of CTMA-DNA doped with (E)-2-(2-(4-(diethylamino)styryl)-4H-pyran-4-ylidene)malononitrile”,Polymer 49, 5417 (2008).

<![if !supportLists]>82. <![endif]>Do Kyu Lee, Sung Kim, Chang Oh Kim, Sung Hwan Eom,Hyoung Taek Oh, and Suk-Ho Choi, “Effect of Ge-nanodot incorporation on thelight-emission from ZnO thin films”, J. Kor.Phys. Soc. 53, 3381 (2008).

2007

<![if !supportLists]>81. <![endif]>C.J. Park, W.-C. Yang, H. Y. Cho, Min ChoulKim, Sung Kim, and Suk-Ho Choi, "Effect of Si-spacer thickness on opticalproperties of multi-stacked Ge quantum dots grown by rapid thermal chemical vapor deposition ",J.Appl. Phys. 101, 014304 (2007).

<![if !supportLists]>80. <![endif]>K. S. Seol, K. S. Cho, B.-K. Kim, J.-Y. Choi, E.-K. Lee, Y.-S. Min,J.-B. Park, and Suk-Ho Choi, "Nonvolatile memory devices fabricated byusing colloidal Ni nanocrystals", J. Kor.Phys. Soc. 50, 49 (2007).

<![if !supportLists]>79. <![endif]>Sung Kim, Yong Min Park, Suk-Ho Choi, and Kyung Joong Kim, "Origin of cathodoluminescence from Sinanocrystal/SiO₂ multilayers", J.Appl. Phys. 101, 034306 (2007).

<![if !supportLists]>78. <![endif]>KyuIl Han, Yong Min Park, Sung Kim, Suk-Ho Choi, Kyung Joong Kim, Il Han Park, andByung-Gook Park, "Enhancement of Memory Performance Using Doubly-StackedSi Nanocrystal Floating Gates Prepared by Ion Beam Sputtering in UHV", IEEETrans. Electron Devices 54, 359(2007).

<![if !supportLists]>77. <![endif]>Sung Kim, Yong Min Park, Suk-Ho Choi, Kyung Joong Kim, and Dong HoonChoi, "Temperature-dependent carrier recombination processes innanocrystalline Si/SiO₂ multi-layers studied by continuous-wave andtime-resolved photoluminescence", J.Phys. D40, 1339(2007).

<![if !supportLists]>76. <![endif]>S.Choi, Y.-K. Cha, B.-S. Seo, S. Park, J.-H. Park, S. Shin, K. S. Seol, J.-B.Park, Y.-S. Jung, Y. Park, Y. Park, I.-K. Yoo, and Suk-Ho Choi,"Atomic-layer deposited IrO₂ nanodots for charge-trapflash-memory devices", J. Phys. D40, 1426 (2007).

<![if !supportLists]>75.<![endif]>Sung Kim, Yong Min Park,Suk-Ho Choi, and Kyung Joong Kim, "Time-integrated and time-resolvedphotoluminescence properties of Si nanocrystal/SiO₂ multilayersgrown by ion beam sputtering", J. Kor. Phys. Soc. 50, 567 (2007).

<![if !supportLists]>74. <![endif]>S.-W. Lee, T.G. Kim, K. Hirakawa,J.S. Kim, S.-H. Choi, and H.Y. Cho, “Lateral photoconductivity and bound statesof self-assembled Ge/Si quantum dots”, Nanotechnology18, 105403(2007).

<![if !supportLists]>73. <![endif]>Min Choul Kim, Yong Min Park, Suk-Ho Choi,and Kyung Joong Kim, "Photoluminescence characterization of Si-nanocrystalformation in Si-rich SiO_x depending onthickness, oxygen content, and existence of SiO₂ cap layer", J. Kor.Phys. Soc. 50, 1760 (2007).

<![if !supportLists]>72. <![endif]>Dong Hoon Choi, Kyu Il Han, In-HeeChang, Suk-Ho Choi, Xiao-Hang Zhang, Kwang-Hyun Ahn, Yong Kyun Lee, and JinJang, "Synthesis of p-type conjugated dendrimers bearing phenothiazinemoiety at the periphery and their light-emitting device characterization",Synthetic Metals 157, 332 (2007).

<![if !supportLists]>71. <![endif]>Min Choul Kim, Sung Kim, Suk-Ho Choi, and Sangjin Park, “Anomalous light-induced enhancement ofphotoluminescence from Si nanocrystals fabricated by thermal oxidation ofamorphous Si”, Appl.Phys. Lett. 91, 033111 (2007).

<![if !supportLists]>70. <![endif]>D. Kang, I. Song, C. J. Kim, Y. S. Park, T. D. Kang, H. S. Lee,J.-W. Park, S. H. Baek, and S.-H. Choi, “The effect of Ga/In ratio on theoptical and electrical properties of GaInZnO thinfilms grown on SiO₂/Si substrates”, Appl.Phys. Lett. 91, 091910 (2007).

<![if !supportLists]>69. <![endif]>Sung Kim, Min Choul Kim, Suk-Ho Choi, K.J. Kim, H. N. Hwang, and C. C. Hwang, “Sizedependence of Si 2p core-level shift at Si nanocrystal/SiO₂interfaces”, Appl. Phys. Lett. 91,103113 (2007).

<![if !supportLists]>68. <![endif]>Do Kyu Lee, Sung Kim, Min Choul Kim, SungHwan Eom, Hyoung Taek Oh,and Suk-Ho Choi, "Annealing effect on the electricaland optical characteristics of undoped ZnOthin films grown on Si substrates by RF magnetron sputtering", J. Kor.Phys. Soc. 51, 1378 (2007).

2006

<![if !supportLists]>67. <![endif]>Sung Kim, Hyung-Sun Hwang, Suk-Ho Choi, and Kyung Joong Kim,“Nonvolatile memory properties of thin oxides with single- and multi- layeredSi nanocrystals obtained by ion beam sputtering”, J. Kor. Phys. Soc. 48, 108 (2006).

<![if !supportLists]>66. <![endif]>C. J. Park, H. Y. Cho, S. Kim, Suk-Ho Choi, R. G. Elliman, J. H.Han, Chungwoo Kim, H. N. Hwang, and C. C. Hwang,"Annealing temperature dependence of capacitance-voltage characteristicsin Ge-nanocrystal based nonvolatile memory structures",J.Appl. Phys. 99, 036101 (2006).

<![if !supportLists]>65. <![endif]>C. J. Park, K. H. Cho, W.-C. Yang, H. Y. Cho, Suk-Ho Choi, R. G.Elliman, J. H. Han, and Chungwoo Kim, “Largecapacitance-voltage hysteresis loops in SiO₂ films containing Genanocrystals produced by ion implantation and annealing”, Appl. Phys. Lett. 88, 071916 (2006).

<![if !supportLists]>64. <![endif]>Min Choul Kim, Kyu Il Han, Sung Kim,Suk-Ho Choi, C.J. Park, H.T. Oh, and H.Y. Cho, "Optical characterizationof Ge quantum dos grown by rapid thermal chemical vapourdeposition", J.Kor. Phys. Soc. 48, 1342 (2006).

<![if !supportLists]>63. <![endif]>Dong Hoon Choi, Min Ju Cho, Kyu Il Han, In-HeeChang, Jong Seok Song,Jae-Hong Kim, and Suk-Ho Choi, “Luminescence Properties of MEH-PPV and itsCrosslinked Polymer : Effect of Crosslink onPhotoluminescence and Electroluminescence”, Synthetic Metals 156, 685 (2006).

<![if !supportLists]>62. <![endif]>Sangjin Park,Young-Kwan Cha, Daigil Cha, YoungsooPark, In-Kyeong Yoo, Jung-Hyun Lee, Kwang Soo Seol, and Suk-Ho Choi,"Multi-bit memories using a structure of SiO₂/partially-oxidizedamorphous Si/HfO₂", Appl.Phys. Lett. 89, 033122 (2006).

<![if !supportLists]>61. <![endif]>K. S. Seol, S. J. Choi, J.-Y. Choi, E.-J. Jang, B.-K. Kim, S.-J.Park, D.-G. Cha, J.-B. Park, Y. Park, and Suk-Ho Choi,"Pd-nanocrystal-based nonvolatile memory structures with asymmetric SiO₂/HfO₂tunnel barrier", Appl. Phys. Lett. 89,083109 (2006).

<![if !supportLists]>60.<![endif]>Sung Kim, Suk-Ho Choi, C. J.Park, H. Y. Cho, and R. G. Elliman, "Structural and opticalcharacterization of Ge nanocrystals showing large nonvolatile memories inmetal-oxide-semiconductor structures", J. Kor. Phys. Soc. 49, 959 (2006).

<![if !supportLists]>59. <![endif]>JaeYoung Bae, Suk-Ho Choi, and Byeong-Soo Bae, “Preparation and OpticalCharacterization of Mesoporous Silica Films with Different Pore Sizes",Bull. Korean Chem. Soc. 27, 1562(2006).

<![if !supportLists]>58. <![endif]>Sangjin Park,Young-Kwan Cha, Daigil Cha, Sangmin Shin, Jae Woong.Hyun, Jung Hoon Lee, Youngsoo Park, In-Kyeong Yoo andSuk-Ho Choi, "A new operating scheme by switching the polarity ofprogram/erase bias for partially-oxidized amorphous-Si based charge trap memory",IEEETrans. Electron Devices 53, 2847(2006).

<![if !supportLists]>57. <![endif]>Y.-K.Cha, S. Park, Y. Park, I.-K. Yoo, D. Cha, J. H. Shin, Suk-Ho Choi, “Effect ofhydrogenation on the memory properties of Si nanocrystals obtained byinductively-coupled plasma chemical vapourdeposition”, Appl. Phys. Lett. 89, 202112 (2006).

<![if !supportLists]>56. <![endif]>DaigilCha, Jung H. Shin, Sangjin Park, Eun-ha Lee, Yoondong Park, Youngsoo Park,In-Kyeong Yoo, Kwang Soo Seol, and Suk-Ho Choi, "High trap density andlong retention time from self-assembled amorphous Si nanocluster floating gatenon-volatile memory",Appl. Phys. Lett. 89, 243513 (2006).

<![if !supportLists]>55. <![endif]>S.Jung, I. O. Parm, K. S. Jang, D.-H. Park, B.-H. Sohn, J. C. Jung, W. C. Zin,Suk-Ho Choi, S. K. Dhungel, and J. Yi, J. Nanosci. Nanotechnol. 6,3652 (2006).

2005

<![if !supportLists]>54. <![endif]>Kang-Joo Lee, Tae-Dong Kang, Hosun Lee,Seung Hui Hong, Suk-Ho Choi, Tae-Yeon Seong, Kyung Jung Kim, and Dae Won Moon,Optical properties of SiO₂/nanocrystalline Si multilayers studiedusing spectroscopic ellipsometry, Thin Solid Films, 476, 196(2005).

<![if !supportLists]>53. <![endif]>KyungJoong Kim, Dae Won Moon, Seung-Hui Hong, Suk-Ho Choi, Moon-Seung Yang, Ji-HongJhe, and Jung H. Shin, "In-situ Characterization of Stoichiometry for the Buried SiO_x Layers in SiO_x/SiO₂Superlattices by XPS and the Effect on the PL Property", Thin SolidFilms, 478, 21 (2005).

<![if !supportLists]>52. <![endif]>C.-M. Lee,S.-H. Choi, S.-K. Noh, J. I. Lee, J.-S. Kim, and I.-K. Han, "Threemodal size distribution of self-assembled InAs quantumdots", Jpn. J. Appl. Phys. 44, 2037 (2005).

<![if !supportLists]>51. <![endif]>Bin Nal Yoon, In-Hee Chang, Suk-Ho Choi,Dong Hoon Choi, Min Ju Cho, and Jae Hong Kim, "Unusual behavioursof photoluminescence by long-term illumination in alkoxy substituted phenylenevinylene polymer", Synthetic Metals, 150, 213(2005).

<![if !supportLists]>50. <![endif]>M. Kang,Y.-R. Ko, M.-K. Jeon, S.-C. Lee, S.-J. Choung, J.-Y. Park, S. Kim, and S.-H.Choi, "Characterization of Bi/TiO₂ nanometer sized particlesynthesized by solvothermal method and CH₃CHO decomposition in aplasma-photocatalytic system", J. Photochem. Photobiol. A: Chem. 173,128 (2005).

<![if !supportLists]>49. <![endif]>Xiao-HangZhang, Suk-Ho Choi, Dong Hoon Choi, and Kwang-Hyun Ahn, Synthesis andphotophysical properties of phenothiazine-labeled conjugated dendrimers,Tetrahedron Letters, 46, 5273(2005).

2004

<![if !supportLists]>48. <![endif]>T. D. Kang, K. J. Lee, S. H. Choi,Hosun Lee, J. H. Kim, and D. H. Choi, “Opticalproperties of poly 2-methoxy-5-hexyloxy phenylenevinylene and the copolymerswith N-hexylphenothiazine and alkyloxydivinylbenzene”, J. Appl. Phys. 95, 2303(2004).

<![if !supportLists]>47. <![endif]>C. J. Park, Y. H. Kwon, T. W. Kang, H. Y. Cho, S. Kim, S.-H. Choi,and R. G. Elliman, "Origin of luminescence from Si^--implanted(1102) Al₂O₃", Appl. Phys. Lett. 84, 2667 (2004).

<![if !supportLists]>46. <![endif]>Suk-Ho Choi, Bin Nal Yoon, Hosun Lee, DongHoon Choi, Kwang Yong Oh, Jae Hong Kim, JeongryulKim, and Hakwon Kim, "Photoluminescence propertiesof the alternating copolymers with alkoxy substituted phenylene vinylene andN-hexyl phenothiazine", J. Kor. Phys. Soc. 44, 934 (2004).

<![if !supportLists]>45. <![endif]>S. H. Hong, S. Kim, S.-H. Choi, K.J. Kim, D. W. Moon, T. D. Kang, and H. Lee,"OpticalCharacterization of Si Nanocrystals in Si-rich SiO_Xand SiO_X/SiO₂ Multilayers Grownby Ion Beam Sputtering", J.Kor. Phys. Soc. 45, 116 (2004).

<![if !supportLists]>44. <![endif]>C.-M. Lee, S.-H. Choi, C.-S. Kim, S.-K. Noh, J. I. Lee, K. Y. Lim,and I. K. Han, "PhotoluminescenceInvestigation of In_0.15Ga_0.85N/GaNMultiple Quantum Wells", J.Kor. Phys. Soc. 45, L243 (2004).

<![if !supportLists]>43. <![endif]>Dong Hoon Choi, Woong Gi. Jun, Kwang Yong Oh, Jae Hong Kim, andSuk-Ho Choi, "Diffraction behavior of photorefractive molecular materialscontaining multifunctional phenothiazine dimer", J. Kor. Phys. Soc. 45,497 (2004).

<![if !supportLists]>42. <![endif]>Chang-MyungLee, Suk-Ho Choi, Joo In Lee, and N. Koguchi, "Si-doping and annealingeffects on In_0.5Ga_0.5As/GaAs quantum dots grown byheterogeneous droplet epitaxy", Physica E 24, 211 (2004).

<![if !supportLists]>41. <![endif]>In-HeeChang, Sung Kim, Jong Seok Song, Suk-Ho Choi, Min Ju Cho, Dong Hoon Choi, Jae-Hong Kim,"Photoinduced Increasing or Decreasing Behaviours of Photoluminescence in Phenylene VinylenePolymer Derivatives", J.Kor. Phys. Soc. 45, S505 (2004).

<![if !supportLists]>40. <![endif]>S. Kim, C. J. Park, H. Y. Cho, S.-H. Choi, and R. G. Elliman,"Luminescence study of Si^-- and Ge^-- implanted(1102) sapphires", J. Kor. Phys. Soc. 45, S501 (2004).

<![if !supportLists]>39. <![endif]>C.-M. Lee,S.-H. Choi, J. C. Seo, J. I. Lee, J. Y. Leem, and I.K. Han, "Abnormal Photoluminescence Behavior of Self-Assembled InAsQuantum Dots with Bimodal Size Distribution", J. Kor. Phys. Soc. 45,1615 (2004).

2003

<![if !supportLists]>38. <![endif]>S.-H. Choi, H. Y. Kim, Y.-K. Hong, J.-Y. Koo, J. Seok, and J. Kim,"Photoluminescence study of micro-patterned Si/Ge/Si single quantumwells", J. Kor. Phys. Soc. 42, S120 (2003).

<![if !supportLists]>37. <![endif]>Nae-Man Park, Sang Hyeob Kim, Gun YongSung, Suk-Ho Choi, and Seong-Ju Park, "Charging effects in amorphoussilicon quantum dots embedded in silicon nitride", J. Kor. Phys. Soc. 42,S361 (2003).

<![if !supportLists]>36. <![endif]>Dong Hoon Choi, Dejun Feng, Hanna Yoon, and Suk-Ho Choi,"Diffraction gratings of photopolymers composed of polyvinylalcoholand polyvinylacetate binder", Macromolecularresearch 11, 36 (2003).

<![if !supportLists]>35. <![endif]>Seung Yol Jeong, Jae Yon Kim, HyunDuk Yang, Bin Nal Yoon, Suk-Ho Choi, Sung Jin Eum,Cheol Woong Yang, and Young Hee Lee, “Synthesis ofSilicon Nanotubes on Porous Alumina Using Molecular Beam Epitaxy”, AdvancedMaterials 15, 1172 (2003).

<![if !supportLists]>34. <![endif]>Nae-Man Park, Sang-Hun Jeon, Hyun-Deok Yang, HyunsangHwang, Seong-Ju Park, and Suk-Ho Choi, "Size-dependent charge storage inamorphous silicon quantum dots embedded in silicon nitride", Appl. Phys.Lett. 83, 1014 (2003).

<![if !supportLists]>33. <![endif]>Jun-Sung Bae, Suk-Ho Choi, Kyung Joong Kim, and Dae Won Moon,"Visible photoluminescence from Si nanocrystals in Si/SiO₂multilayers grown by ion beam sputtering", J. Kor. Phys. Soc. 43,557 (2003).

<![if !supportLists]>32. <![endif]>Dejun Feng, Hanna Yoon, DongHoon Choi, and Suk-Ho Choi, Holographic gratings recorded on a new photopolymercomposed of photosensitive polymer binder, Molecular Crystals and LiquidCrystals 406, 101 (2003).

2002

<![if !supportLists]>31. <![endif]>S.-H. Choi, B.-Y. Seo, H. Lee, B. I. Hong, H. J. Lee, and J. H. Lee,"Formation characteristics of Si nanocrystals in fused silica", J.Kor. Phys. Soc. 40, 148 (2002).

<![if !supportLists]>30. <![endif]>S.-H. Choi, J. N. Kim, H. Y. Kim, Y.-K. Hong, J.-Y. Koo, J. Seok,and J. Kim, "Enhancement of photoluminescence by microdiskformation from Si/Ge/Si single quantum well", Appl. Phys. Lett. 80,2520 (2002).

<![if !supportLists]>29. <![endif]>S.-H. Choi, S.-C. Han, and Suntae Hwang,"Defect-related photoluminescence and Raman studies on the growth of Genanocrystals during annealing of Ge⁺-implanted SiO₂films", Thin Solid Films 413, 177 (2002).

<![if !supportLists]>28. <![endif]>Nae-Man Park, Suk-Ho Choi, and Seong-Ju Park, "Electroncharging and discharging in amorphous silicon quantum dots embedded in siliconnitride", Appl. Phys. Lett. 81, 1092 (2002).

<![if !supportLists]>27. <![endif]>D. H. Choi, K. Y. Oh, W. G. Jun, J. H. Kim, and S.-H. Choi,"Diffraction behavior of photorefractive molecular materials containingphenothiazine derivatives, Appl. Phys. Lett. 81, 4727 (2002).

2001

<![if !supportLists]>26. <![endif]>S.-H. Choi, "Photo-induced charge transport in SiO₂films containing Si nanocrystals", Superlattices and Microstructures 29,239 (2001).

<![if !supportLists]>25. <![endif]>S.-H. Choi, J. N. Kim, and H. Y. Cho, "Hydrogenation Effects onthe Structural and Optical Properties of Si⁺-Implanted FusedSilica", Current Applied Physics 1, 375-378 (2001).

<![if !supportLists]>24. <![endif]>H. C. Lee, S. I. Lee, H. Lee, S.-H. Choi, J.-I. Ryu and J. Jang,"Dielectric Function of Nano-Crystalline Silicon:Effect of Hydrogen ", J. Kor. Phys. Soc.39, S30 (2001).

<![if !supportLists]>23. <![endif]>S. Y. Sumarokov, J. H. Whang, S. J. Jung,J. M. Lee, and S.-H. Choi, "Photoluminescence of lithium metaphosphateglasses doped with lanthanides ", Functional Materials 8, 1 (2001).

2000

<![if !supportLists]>22.<![endif]>S.-H. Choi, R. G. Elliman, S. Cheylan, and J.P.D. Martin, "Intrinsic defect-relatedblue-violet and UV photoluminescence from Si⁺-implanted fusedsilica", Appl. Phys. Lett. 76, 2062 (2000).

<![if !supportLists]>21.<![endif]>S.-H. Choi, "Bias- andphoto- induced charging effects in SiO₂ films containing Sinanocrystals", J. Kor. Phys. Soc. 37, 461 (2000).

<![if !supportLists]>20.<![endif]>H. Lee, S. M. Kim, B. Y. Seo,E. Z. Seong, S-.H. Choi, S. Lee, and J. K. Furdyna, "Optical study of ZnSeTealloys using spectroscopic ellipsometry", Appl. Phys. Lett. 77,2997 (2000).

1999

<![if !supportLists]>19.<![endif]>H. Lee and S.-H. Choi,"Luminescence from Dislocations in Silicon-Germanium Layer Grown onSilicon Substrate", J. Appl. Phys. 85, 1771 (1999).

<![if !supportLists]>18.<![endif]>H. Lee, S.-H. Choi, E.Seong, and S. M. Kim,"Photoluminescence Study of 1018 meV DefectLines from Ion-implanted Silicon", J. Kor. Phys. Soc. 34, S295(1999).

<![if !supportLists]>17.<![endif]>S.-H. Choi and R. G. Elliman,"Negative photoconductivity in SiO₂ films containing Sinanocrystals", Appl. Phys. Lett. 74, 3987 (1999).

<![if !supportLists]>16.<![endif]>S.-H. Choi and R. G. Elliman,"Reversible charging effects in SiO₂ films containing Sinanocrystals ", Appl. Phys. Lett. 75, 968 (1999).

1998

<![if !supportLists]>15. <![endif]>S.-H. Choi and J. Jang, "Long-Period Oscillation ofPhotoluminescence during strong illumination in nanocrystalline siliconfilms", J. Kor. Phys. Soc. 32, 718 (1998).

<![if !supportLists]>14. <![endif]>H. Lee and S.-H. Choi, "Temperature Dependence ofDislocation-Related Luminescence in Silicon-Germanium Heterostructure", J.Kor. Phys. Soc. 33, S298 (1998).

<![if !supportLists]>13. <![endif]>S.-H. Choi, S. H. Won, and J. Jang, "Excitation EnergyDependence of Photoluminescence in Nanocrystalline Silicon Deposited by RemotePlasma Vapor Deposition", Thin Solid Films 335, 266 (1998).

Before1998

<![if !supportLists]>12. <![endif]>S.-H. Choi, G.L. Park, C. Lee, and J. Jang, "Persistentphotoconductivity in hydrogenated amorphous silicon", Solid State Comm. 59,177 (1986).

<![if !supportLists]>11. <![endif]>S.-H. Choi, C. Lee, and J. Jang, "Effect of argon dilution ofsilane on persistent photoconductivity in single-layered hydrogenated amorphoussilicon", J. Appl. Phys. 61, 446 (1987).

<![if !supportLists]>10. <![endif]>S.-H Choi, B.S. Yoo, C. Lee, and J. Jang, "Photo and biaseffects in coplanar conductance of doping- modulated amorphous siliconsuperlattices", J. Non-Cryst. Solids 97&98, 911 (1987).

<![if !supportLists]>9.<![endif]>S.-H. Choi, B.S. Yoo, C. Lee,and J. Jang, "Doping and annealing effects on persistent photoconductivityin doping-modulated amorphous silicon superlattices", Phys. Rev. B36,6479 (1987).

<![if !supportLists]>8. <![endif]>B.S. Yoo, S.-H, Choi, C. Lee, and J. Jang, "Light-inducedmetastable state in doping-modulated amorphous silicon superlattices",Superlattices and Microstructures, 4, 133 (1988).

<![if !supportLists]>7. <![endif]>S.-H. Choi, S. Dittman, and C.R. Tilford, "Stabilizationtechniques for spinning rotor gage residual drag", J. Vac. Sci. Technol. A8,4079 (1990).

<![if !supportLists]>6.<![endif]>S.-H. Choi and D. Son,"Ball material dependence of spinning rotor gage residual drag",Vacuum 42, 897 (1991).

<![if !supportLists]>5. <![endif]>S.-H. Choi, "Power-law dependence of persistentphotoconductivity on exposure time in compensated a-Si:H",Solid State Comm. 86, 589 (1993).

<![if !supportLists]>4. <![endif]>S.-H. Choi, H. Chung, and G.S. Shin, "Conditions ofluminescence degradation or enhancement in porous silicon", Solid StateComm. 95, 341 (1995).

<![if !supportLists]>3.<![endif]>S.-H. Choi and G.W. Lee,"Surface effects on the electrical conductance of porous silicon",Superlattices and Microstructures 28, 207 (1996).

<![if !supportLists]>2. <![endif]>H. Lee and S.-H. Choi, "Observation of Defect-Free Band-EdgePhotoluminescence from PseudomorphicSilicon-Germanium-Carbon Alloys Grown on Silicon Substrates", J. Kor.Phys. Soc. 29, 792 (1996).

<![if !supportLists]>1. <![endif]>H. Lee, S.-H. Choi, and T.-Y. Seong, "Origin ofDislocation-Related Photoluminescence Bands in Very Thin Silicon-GermaniumLayers Grown on Silicon Substrates", Appl. Phys. Lett. 71, 3823(1997).

Domestic Journal

1. D. H. Lee and S.-H. Choi, “Electrical properties of doped graphene transferred on EVA/PET as functions of AuCl₃ and RhCl₃ concentrations”, Kyung Hee Journal of Natural Sciences 20, 51 (2014).
2. S. Kim, D. H. Shin, and S.-H. Choi, “Structural, optical, and electrical characterization of p-type graphene for various AuCl₃ doping concentrations”, J. Korean Vac. Soc. 22, 270 (2013).
3. J. H. Kim, S. Kim, and S.-H. Choi, “CH₄-flow-rate-dependent structural, optical, and electrical characterization of CVD-grown graphene”, New Physics 63, 1301 (2013).
4. J.-W. Park, S. Kim, S.-H. Choi, and H. Lee, “Optical Properties of Transition-metal Oxides of MnO and Fe_0.925O Crystals Studied with Spectroscopic Ellipsometry and Raman Spectroscopy”, New Physics 63, 818 (2013).
5. J. Kim, Sung Kim, and S.-H. Choi, “Control of Porous Morphologies on the Surface of Si Nanowires Fabricated by Metal-Assisted Chemical Etching”, Kyung Hee Journal of Natural Sciences 19, 19 (2013).
6. D. H. Shin and S.-H. Choi, “Improvement of sheet resistance and transparency of graphene by thermal annealing”, Kyung Hee Journal of Natural Sciences 18, 12 (2012).
7. C. O. Kim and S.-H. Choi, “Effect of doping concentration on the characteristics of Cu-doped ZnO films”, Kyung Hee Journal of Natural Sciences 18, 8 (2012).
8. J. Kim and S.-H. Choi, “Fabrication and Optical Characterization of Porous Silicon Nanowires”, Journal of the Korean Society of Manufacturing Technology Engineers 21, 855 (2012).
9. Min Choul Kim and Suk-Ho Choi, "Formation of charge-trap levels in Al₂O₃ by transition-metal ion implantation for nonvolatile memory devices and characterizations", Kyung Hee Journal of Natural Sciences 16, 66 (2010).
10. Pil Seong Jeong and Suk-Ho Choi, "Photoluminescence of amorphous GaInZnO thin films", Kyung Hee Journal of Natural Sciences 14, 7 (2008).
11. Seung Hui Hong, Do Kyu Lee, and Suk-Ho Choi, “Optical Properties of Ge Nanocrystals/SiO₂ Multilayers Produced by Ion Beam Sputtering”, Kyung Hee Journal of Natural Sciences 13, 31 (2007).
12. Yong-Min Park and Suk-Ho Choi, “Electronical and Luminescence Properties of Silicon Nanocrystal Multilayers Grown by Ion Beam Sputtering”, Kyung Hee Journal of Natural Sciences 12, 46 (2006).
13. Do-Kyu Lee and Suk-Ho Choi, “Electrical and optical properties of undoped ZnO thin films grown on Si substrates by RF magnetron sputtering”, Kyung Hee Journal of Natural Sciences 12, 60 (2006).
14. Min Choul Kim and Suk-Ho Choi, “Nonvolatile memory characteristics of Si-nanocrystal floating-gate MOSFETs fabricated by using 0.5 μm CMOS standard processes”, Kyung Hee Journal of Natural Sciences 12, 37 (2006).
15. Sung Kim, Kyu Il Han, and Suk-Ho Choi, “Luminescence of Ge quantum dots grown on silicon (100) by rapid thermal chemical vapor deposition”, Kyung Hee Journal of Natural Sciences 11, 17 (2005).
16. Min Choul Kim and Suk-Ho Choi, “Formation and photoluminescence of silicon nanocrystals depending on the thickness of single-layer SiO_x grown by Ion beam sputter deposition”, Kyung Hee Journal of Natural Sciences 11, 31 (2005).
17. Sung Kim and Suk-Ho Choi, “Time-resolved Photoluminescence from Si Nanocrystals in SiO_X/SiO₂ Multilayers Grown by Ion Beam Sputtering”, Kyung Hee Journal of Natural Sciences 11, 40 (2005).
18. Kyu il Han and Suk-Ho Choi, “High-performance memory characteristics of 1.5μm n-channel MOSFET with Si-nanocrystal floating gate”, Kyung Hee Journal of Natural Sciences 11, 92 (2005)
19. Hoon Young Cho and Suk-Ho Choi, "Light Emission in Nano-Crystalline Si", New Physics 48, 201 (2004).
20. Kyu il Han and Suk-Ho Choi, "Synthesis and light-emitting characteristic of conjugated dendrimer bearing Phenothiazine moiety", Kyung Hee Journal ofNatural Sciences 10, 42 (2004).
21. Sung Kim and Suk-Ho Choi, "Temperature Dependence of The Photoluminescence from Si Nanocrystals in SiO_X/SiO₂ Multilayers Grown by Ion Beam Sputtering", Kyung Hee Journal of Natural Sciences 10, 58 (2004).
22. In-Hee Chang and Suk-Ho Choi, "Cross-linking effects on the properties of poly(p-phenylene-vinylene) derivatives and light-emitting device application", Kyung Hee Journal of Natural Sciences 10, 66 (2004).
23. Jeong-Yun Lee and Suk-Ho Choi, "Origin of Particle Generation in InductivelyCoupled Plasma Reactor", J. Graduate School of Technology and Management 1, 71 (2004).
24. Seung Hui Hong and Suk-Ho Choi, "Photoluminescence properties of Si nanocrystals in SiOx/SiO₂ multilayers produced by ion beam sputtering and thermal annealing", Kyung Hee Journal of Natural Sciences 9, 20 (2003).
25. J. H. Whang, S. J. Jung, S. W. Shin, S.-H. Choi, and S. Yu. Sumarokov, "Fabrication and Scintillation Characteristics of LiPO₃ glass scintillators with the lanthanides activators", J. of the Korean Sensors Society 12, 139 (2003).
26. Young Kuk Kim and Suk-Ho Choi, "Optical and Electrical Properties of Si₃N₄ Thin Films Fabricated by LPCVD", Kyung Hee Journal of Natural Sciences 9, 61 (2003).
27. Sung Kim and Suk-Ho Choi, "Luminescence Study of Semiconductor Nanocrystals Formed in Insulating Host Materials by Ion implantation", Kyung Hee Journal of Natural Sciences 9, 123 (2003).
28. T. D. Kang, G. J. Lee, H. S. Lee, Suk-Ho Choi, Jae-Hong Kim, and Dong Hoon Choi, "Dielectric function of poly phenylene vinylene derivatives", Kyung Hee Journal ofNatural Sciences 9, 87 (2003).
29. J. S. Bae, S.-H. Choi, J. N. Kim, K. J. Kim, and D. W. Mun, "Visible luminescence from nanocrystalline silicon films produced by ion-beam sputtering deposition", Proceedings of the 9th Korea Semiconductor Conference, p. 95, Chonan, Korea (2002).
30. Bin Nal Yoon·and Suk-Ho Choi, "Synthesis and characterization of poly(p-phenylene vinylene) derivatives for polymer-based organic light-emitting diodes", Kyung Hee Journal of Natural Sciences 8, 45 (2002).
31. Dejun Feng,?/span>Dong-Hoon Choi, and·Suk-Ho Choi, "Electric voltage tuning of all-fiber Mach-Zehnder Interferometer", Kyung Hee Journal of Natural Sciences 8, 57 (2002).
32. Dejun Feng,?/span>Dong-Hoon Choi, and·Suk-Ho Choi, " Numerical study of non-uniform reflection Volume Holographic Grating ", Kyung Hee Journal of Natural Sciences 8, 63 (2002).
33. S.-H. Choi, "Defect-related Photoluminescence of Si⁺-implanted fused silica", Journal of Multimedia Technology 1, 5 (2001).
34. J. N. Kim and S.-H. Choi, "Fabrication and Characterization of Si/Ge/Si Single Quantum Well Microdisks", Kyung Hee Journal of Natural Sciences 7, 22 (2001).
35. B.-Y Seo and S.-H. Choi, "Structural properties of Si nanocrystals formed in fused silica by ion implantation", The Journal of Materials Science and Technology 13, 57 (2000).
36. S.-Y. Jeong, S.-H. Choi, J.I. Ryu, and J. Jang, "Meyer-Neldel Rule in Nanocrystalline Silicon Deposited by RPCVD", New Physics 38, 98 (1998).
37. K.H. Kim, J.H. Lee, K.I. Kim, J.S. Koh, S.-H. Choi, Y.K. Kwon, W.S. Lee, and Y.H. Lee, "Photoluminescence from Si⁺-implanted SiO₂ films on Crystalline Silicon", J. Kor. Vac. Soc. 7, 150 (1998).
38. S.-Y. Jeong and S.-H. Choi, "Electrical Properties of Nanocrystalline Silicon", J. Laser Engineering 8, 63 (1997).
39. B.Y. Ryu, J.I. Ryu, H.C. Kim, J. Jang, and S.-H. Choi, "Photoluminescence in the poly-Si Deposited by RPCVD Using SiF₄/H₂", Applied Physics 9, 524 (1996).
40. G.-W. Lee and S.-H. Choi, "Electrical Conductance Mechanism of Porous Silicon", J. Laser Engineering 7, 73 (1996).
41. S.-H. Choi and B.H. Mun, "Metastable effects in porous silicon", Applied Physics 8, 143 (1995).
42. B.H. Mun and S.-H. Choi, "Fabrication and characterization of porous silicon", The Journal of Materials Science and Technology 7, 141 (1994).
43. S.-H. Choi, "Persistent photoconductance mechanism based on dangling-bond creation in compendated a-S:H", New Physics 33, 232 (1993).
44. S.-H. Choi, "Exposure time and temperature dependence of persistent photoconductivity in compensated a-Si:H", The Journal of Materials Science and Technology 5, 85 (1992).
45. S.-H. Choi, "Characterization and stabilization of spinning rotor gage residual drag", New Physics 31, 107 (1991).
46. S.-H. Choi, S.S. Hong, and J.H. Park, J.Y. Leem, K.H. Chung, "Fabrication of porous plug using tunsten wires", Applied Physics 4, 127 (1991).
47. K.H. Chung, S.-H. Choi, U.J. Yoo, and C. Kum, "Establishment of vacuum standards up to 10^-6 Pa by improving the flowmeter throughput control", New Physics 29, 414 (1989).
48. S.-H. Choi, S.K. Lee, S.W. Han, and K.H. Chung, "Calibration of residual gas analyzer by vacuum standard system", New Physics 28, 1 (1988).
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